All MOSFET. AONE38132 Datasheet

 

AONE38132 Datasheet and Replacement


   Type Designator: AONE38132
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 134 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN3.3X3.3A-8L
 

 AONE38132 substitution

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AONE38132 Datasheet (PDF)

 ..1. Size:693K  aosemi
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AONE38132

AONE3813225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 60A 134A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:436K  aosemi
 aone36182.pdf pdf_icon

AONE38132

AONE3618225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 17A 34A High Current Capability RDS(ON) (at VGS=10V)

 9.2. Size:436K  aosemi
 aone36132.pdf pdf_icon

AONE38132

AONE3613225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 17A 34A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: AONR30310 , AONR32318 , AONR34332C , AONR36321 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , IRF640 , AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U , AONP38324U , AOCA36102E , AOC3878 .

History: 2N7002BKV | APT60N60BCSG

Keywords - AONE38132 MOSFET datasheet

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