AONE38132 Specs and Replacement
Type Designator: AONE38132
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 134 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: DFN3.3X3.3A-8L
AONE38132 substitution
AONE38132 datasheet
aone38132.pdf
AONE38132 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 60A 134A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aone36182.pdf
AONE36182 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 17A 34A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
aone36132.pdf
AONE36132 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 17A 34A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AONR30310 , AONR32318 , AONR34332C , AONR36321 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , IRFP460 , AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U , AONP38324U , AOCA36102E , AOC3878 .
History: AGM628DM1 | JMSL1006PGQ | JMSL1018AGQ | IXFB210N20P | JMTG100N03A | JMSL1009AKQ | CS7N65FA9R
Keywords - AONE38132 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AGM628DM1 | JMSL1006PGQ | JMSL1018AGQ | IXFB210N20P | JMTG100N03A | JMSL1009AKQ | CS7N65FA9R
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