AONP36320 Specs and Replacement
Type Designator: AONP36320
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 103 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: DFN3.3X3.3C-8L
AONP36320 substitution
- MOSFET ⓘ Cross-Reference Search
AONP36320 datasheet
aonp36320.pdf
AONP36320 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 100A 103A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aonp36336.pdf
AONP36336 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aonp36332u.pdf
AONP36332U 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aonp36332.pdf
AONP36332 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AONR36321, AONR62921, AONR66820, AONR66821, AONR66922, AONE38132, AONP36332, AONP36336, IRF1404, AONP38324, AONP36332U, AONP38324U, AOCA36102E, AOC3878, AONG36322, AONU32320, AON7264C
Keywords - AONP36320 MOSFET specs
AONP36320 cross reference
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AONP36320 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AONR66820 | AONR34332C | AONP36336
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