AONP36320 Datasheet and Replacement
Type Designator: AONP36320
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 103 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: DFN3.3X3.3C-8L
AONP36320 substitution
AONP36320 Datasheet (PDF)
aonp36320.pdf
AONP3632030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 100A 103A Low Gate Charge RDS(ON) (at VGS=10V)
aonp36336.pdf
AONP3633630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)
aonp36332u.pdf
AONP36332U30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V)
aonp36332.pdf
AONP3633230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONR36321 , AONR62921 , AONR66820 , AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 , IRF1404 , AONP38324 , AONP36332U , AONP38324U , AOCA36102E , AOC3878 , AONG36322 , AONU32320 , AON7264C .
History: FQU1N60TU | IRF7467TR | IRF7425TR | IRF9321 | IRF9317 | IRF7416TRPBF | AUIRF6215S
Keywords - AONP36320 MOSFET datasheet
AONP36320 cross reference
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AONP36320 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FQU1N60TU | IRF7467TR | IRF7425TR | IRF9321 | IRF9317 | IRF7416TRPBF | AUIRF6215S
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