All MOSFET. AONG36322 Datasheet

 

AONG36322 Datasheet and Replacement


   Type Designator: AONG36322
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 163 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN3.5X5-8L
 

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AONG36322 Datasheet (PDF)

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AONG36322

AONG3632230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 83A 163A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U , AONP38324U , AOCA36102E , AOC3878 , IRF3710 , AONU32320 , AON7264C , AONH36328 , AONH36334 , AONR20334C , AONR20485 , AONR21117 , AONR21305C .

History: AOB11S60L | BUZ11S2 | SUD25N15-52 | LBSS139DW1T1G | STL10N65M2 | DMB54D0UV | STL42P6LLF6

Keywords - AONG36322 MOSFET datasheet

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