AONG36322 Specs and Replacement

Type Designator: AONG36322

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 163 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: DFN3.5X5-8L

AONG36322 substitution

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AONG36322 datasheet

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AONG36322

AONG36322 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 83A 163A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONP36332, AONP36336, AONP36320, AONP38324, AONP36332U, AONP38324U, AOCA36102E, AOC3878, IRFB4227, AONU32320, AON7264C, AONH36328, AONH36334, AONR20334C, AONR20485, AONR21117, AONR21305C

Keywords - AONG36322 MOSFET specs

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