All MOSFET. AONG36322 Datasheet

 

AONG36322 Datasheet and Replacement


   Type Designator: AONG36322
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 163 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN3.5X5-8L
 

 AONG36322 substitution

   - MOSFET ⓘ Cross-Reference Search

 

AONG36322 Datasheet (PDF)

 ..1. Size:602K  aosemi
 aong36322.pdf pdf_icon

AONG36322

AONG3632230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 83A 163A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U , AONP38324U , AOCA36102E , AOC3878 , IRFB4227 , AONU32320 , AON7264C , AONH36328 , AONH36334 , AONR20334C , AONR20485 , AONR21117 , AONR21305C .

History: AUIRF2804WL

Keywords - AONG36322 MOSFET datasheet

 AONG36322 cross reference
 AONG36322 equivalent finder
 AONG36322 lookup
 AONG36322 substitution
 AONG36322 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.