AONU32320 Specs and Replacement

Type Designator: AONU32320

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 16.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: DFN3X3-8L

AONU32320 substitution

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AONU32320 datasheet

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AONU32320

AONU32320 30V Dual N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RD1D2(ON) ID (at VGS=10V) 15A Logic Level Driving RD1D2(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONP36336, AONP36320, AONP38324, AONP36332U, AONP38324U, AOCA36102E, AOC3878, AONG36322, IRF3710, AON7264C, AONH36328, AONH36334, AONR20334C, AONR20485, AONR21117, AONR21305C, AONR21311C

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