AONU32320 Datasheet and Replacement
Type Designator: AONU32320
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 16.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: DFN3X3-8L
AONU32320 substitution
AONU32320 Datasheet (PDF)
aonu32320.pdf

AONU3232030V Dual N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RD1D2(ON) ID (at VGS=10V) 15A Logic Level Driving RD1D2(ON) (at VGS=10V)
Datasheet: AONP36336 , AONP36320 , AONP38324 , AONP36332U , AONP38324U , AOCA36102E , AOC3878 , AONG36322 , P55NF06 , AON7264C , AONH36328 , AONH36334 , AONR20334C , AONR20485 , AONR21117 , AONR21305C , AONR21311C .
History: AP9563GK-HF | AP2426GEY-HF | HM4490 | BUK7Y1R4-40H | SSM2302GN | BUK7S0R9-40H | 2SK3886-01MR
Keywords - AONU32320 MOSFET datasheet
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History: AP9563GK-HF | AP2426GEY-HF | HM4490 | BUK7Y1R4-40H | SSM2302GN | BUK7S0R9-40H | 2SK3886-01MR



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