AONH36334 Specs and Replacement

Type Designator: AONH36334

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

Cossⓘ - Output Capacitance: 235 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm

Package: DFN3X3A-8L

AONH36334 substitution

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AONH36334 datasheet

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AONH36334

AONH36334 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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 aonh36328.pdf pdf_icon

AONH36334

AONH36328 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 18A 18A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONP36332U, AONP38324U, AOCA36102E, AOC3878, AONG36322, AONU32320, AON7264C, AONH36328, IRFB4115, AONR20334C, AONR20485, AONR21117, AONR21305C, AONR21311C, AONR26309A, AONR32320C, AONR36326C

Keywords - AONH36334 MOSFET specs

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