All MOSFET. AONH36334 Datasheet

 

AONH36334 Datasheet and Replacement


   Type Designator: AONH36334
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm
   Package: DFN3X3A-8L
 

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AONH36334 Datasheet (PDF)

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AONH36334

AONH3633430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

 7.1. Size:711K  aosemi
 aonh36328.pdf pdf_icon

AONH36334

AONH3632830V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 18A 18A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: AONP36332U , AONP38324U , AOCA36102E , AOC3878 , AONG36322 , AONU32320 , AON7264C , AONH36328 , IRFP250N , AONR20334C , AONR20485 , AONR21117 , AONR21305C , AONR21311C , AONR26309A , AONR32320C , AONR36326C .

History: IPA60R299CP | BRB13N50 | MMN75N03 | MTN3484V8 | 2SK1412 | IPB65R110CFDA | 2SJ246S

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