AONR21117 Specs and Replacement

Type Designator: AONR21117

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: DFN3X3A-8L

AONR21117 substitution

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AONR21117 datasheet

 ..1. Size:545K  aosemi
aonr21117.pdf pdf_icon

AONR21117

AONR21117 20V P-Channel MOSFET General Description Product Summary VDS -20V Latest advanced trench technology Low RDS(ON) ID (at VGS=-4.5V) -34A High Current Capability RDS(ON) (at VGS=-4.5V) ... See More ⇒

 8.1. Size:312K  1
aonr21357.pdf pdf_icon

AONR21117

AONR21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 8.2. Size:318K  1
aonr21321.pdf pdf_icon

AONR21117

AONR21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 8.3. Size:314K  aosemi
aonr21307.pdf pdf_icon

AONR21117

AONR21307 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

Detailed specifications: AOC3878, AONG36322, AONU32320, AON7264C, AONH36328, AONH36334, AONR20334C, AONR20485, 8205A, AONR21305C, AONR21311C, AONR26309A, AONR32320C, AONR36326C, AONR36328, AONR36329, AONR66620

Keywords - AONR21117 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.