All MOSFET. AONR36326C Datasheet

 

AONR36326C MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONR36326C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 11 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: DFN3X3A-8L

 AONR36326C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONR36326C Datasheet (PDF)

 ..1. Size:755K  aosemi
 aonr36326c.pdf

AONR36326C AONR36326C

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:371K  aosemi
 aonr36321.pdf

AONR36326C AONR36326C

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:547K  aosemi
 aonr36328.pdf

AONR36326C AONR36326C

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:401K  aosemi
 aonr36329.pdf

AONR36326C AONR36326C

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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