AONR36326C Datasheet and Replacement
Type Designator: AONR36326C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 11 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
Package: DFN3X3A-8L
AONR36326C substitution
AONR36326C Datasheet (PDF)
aonr36326c.pdf

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36321.pdf

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36328.pdf

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
aonr36329.pdf

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONH36334 , AONR20334C , AONR20485 , AONR21117 , AONR21305C , AONR21311C , AONR26309A , AONR32320C , 2N7000 , AONR36328 , AONR36329 , AONR66620 , AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C .
History: GSM3407S | AONP36320 | JCS2N60CB | 2SK3089B | IRF2804SPBF | 2SK293 | AONR32314
Keywords - AONR36326C MOSFET datasheet
AONR36326C cross reference
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History: GSM3407S | AONP36320 | JCS2N60CB | 2SK3089B | IRF2804SPBF | 2SK293 | AONR32314



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