AONR36326C Specs and Replacement

Type Designator: AONR36326C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 11 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: DFN3X3A-8L

AONR36326C substitution

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AONR36326C datasheet

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AONR36326C

AONR36326C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aonr36321.pdf pdf_icon

AONR36326C

AONR36321 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:547K  aosemi
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AONR36326C

AONR36328 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:401K  aosemi
 aonr36329.pdf pdf_icon

AONR36326C

AONR36329 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONH36334, AONR20334C, AONR20485, AONR21117, AONR21305C, AONR21311C, AONR26309A, AONR32320C, AON7408, AONR36328, AONR36329, AONR66620, AONR66924, AONL32328, AOE66410, AON6152A, AON6264C

Keywords - AONR36326C MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs