All MOSFET. AONR36326C Datasheet

 

AONR36326C Datasheet and Replacement


   Type Designator: AONR36326C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 11 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: DFN3X3A-8L
 

 AONR36326C substitution

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AONR36326C Datasheet (PDF)

 ..1. Size:755K  aosemi
 aonr36326c.pdf pdf_icon

AONR36326C

AONR36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:371K  aosemi
 aonr36321.pdf pdf_icon

AONR36326C

AONR3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 80A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:547K  aosemi
 aonr36328.pdf pdf_icon

AONR36326C

AONR3632830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:401K  aosemi
 aonr36329.pdf pdf_icon

AONR36326C

AONR3632930V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONH36334 , AONR20334C , AONR20485 , AONR21117 , AONR21305C , AONR21311C , AONR26309A , AONR32320C , AON7408 , AONR36328 , AONR36329 , AONR66620 , AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C .

Keywords - AONR36326C MOSFET datasheet

 AONR36326C cross reference
 AONR36326C equivalent finder
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 AONR36326C replacement

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