AOE66410 Specs and Replacement

Type Designator: AOE66410

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: DFN5X6-8L

AOE66410 substitution

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AOE66410 datasheet

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 aoe66410.pdf pdf_icon

AOE66410

AOE66410 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Thermal enhanced XSFET package ID (at VGS=10V) 100A Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONR26309A, AONR32320C, AONR36326C, AONR36328, AONR36329, AONR66620, AONR66924, AONL32328, IRLB4132, AON6152A, AON6264C, AON6590A, AONA66916, AOND32324, AOND62930, AONS18314, AONS1R1A70

Keywords - AOE66410 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.