All MOSFET. AOE66410 Datasheet

 

AOE66410 Datasheet and Replacement


   Type Designator: AOE66410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: DFN5X6-8L
 

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AOE66410 Datasheet (PDF)

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AOE66410

AOE66410TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Thermal enhanced XSFET package ID (at VGS=10V) 100A Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)

Datasheet: AONR26309A , AONR32320C , AONR36326C , AONR36328 , AONR36329 , AONR66620 , AONR66924 , AONL32328 , 5N60 , AON6152A , AON6264C , AON6590A , AONA66916 , AOND32324 , AOND62930 , AONS18314 , AONS1R1A70 .

History: NX7002BK | HY4N60T | IPT026N10N5

Keywords - AOE66410 MOSFET datasheet

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