AONA66916 Specs and Replacement
Type Designator: AONA66916
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 197 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 1500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: DFN5X6-8L
AONA66916 substitution
- MOSFET ⓘ Cross-Reference Search
AONA66916 datasheet
aona66916.pdf
AONA66916 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 197A Combination of Low RDS(ON)and wide safe operating area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AONR36329, AONR66620, AONR66924, AONL32328, AOE66410, AON6152A, AON6264C, AON6590A, 4435, AOND32324, AOND62930, AONS18314, AONS1R1A70, AONS1R6A70, AONS20485, AONS21113, AONS21309C
Keywords - AONA66916 MOSFET specs
AONA66916 cross reference
AONA66916 equivalent finder
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AONA66916 substitution
AONA66916 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AOC3870A
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