All MOSFET. AONA66916 Datasheet

 

AONA66916 Datasheet and Replacement


   Type Designator: AONA66916
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 197 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: DFN5X6-8L
 

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AONA66916 Datasheet (PDF)

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AONA66916

AONA66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 197A Combination of Low RDS(ON)and wide safe operating area (SOA) RDS(ON) (at VGS=10V)

Datasheet: AONR36329 , AONR66620 , AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , 2SK3568 , AOND32324 , AOND62930 , AONS18314 , AONS1R1A70 , AONS1R6A70 , AONS20485 , AONS21113 , AONS21309C .

History: PSMN009-100W

Keywords - AONA66916 MOSFET datasheet

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