All MOSFET. AOND32324 Datasheet

 

AOND32324 Datasheet and Replacement


   Type Designator: AOND32324
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN5X6-8L
 

 AOND32324 substitution

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AOND32324 Datasheet (PDF)

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AOND32324

AOND3232430V Dual Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Pch+Nch Complementary MOSFET Trench Power MOSFET ID (at VGS=10V) 16A -16A Low RDS(ON) RDS(ON) (at VGS=10V)

Datasheet: AONR66620 , AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 , AON7410 , AOND62930 , AONS18314 , AONS1R1A70 , AONS1R6A70 , AONS20485 , AONS21113 , AONS21309C , AONS21321 .

History: SQJA02EP

Keywords - AOND32324 MOSFET datasheet

 AOND32324 cross reference
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