AOND32324 Datasheet and Replacement
Type Designator: AOND32324
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN5X6-8L
AOND32324 substitution
AOND32324 Datasheet (PDF)
aond32324.pdf

AOND3232430V Dual Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Pch+Nch Complementary MOSFET Trench Power MOSFET ID (at VGS=10V) 16A -16A Low RDS(ON) RDS(ON) (at VGS=10V)
Datasheet: AONR66620 , AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 , IRF9540N , AOND62930 , AONS18314 , AONS1R1A70 , AONS1R6A70 , AONS20485 , AONS21113 , AONS21309C , AONS21321 .
History: BUZ31H3046 | AOD424G | LN2306LT1G | FC694601 | R9523 | TMAN9N90 | C2M065W060
Keywords - AOND32324 MOSFET datasheet
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History: BUZ31H3046 | AOD424G | LN2306LT1G | FC694601 | R9523 | TMAN9N90 | C2M065W060



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