AOND32324 Specs and Replacement
Type Designator: AOND32324
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN5X6-8L
AOND32324 substitution
- MOSFET ⓘ Cross-Reference Search
AOND32324 datasheet
aond32324.pdf
AOND32324 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Pch+Nch Complementary MOSFET Trench Power MOSFET ID (at VGS=10V) 16A -16A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AONR66620, AONR66924, AONL32328, AOE66410, AON6152A, AON6264C, AON6590A, AONA66916, SPP20N60C3, AOND62930, AONS18314, AONS1R1A70, AONS1R6A70, AONS20485, AONS21113, AONS21309C, AONS21321
Keywords - AOND32324 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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