All MOSFET. AOND62930 Datasheet

 

AOND62930 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOND62930
   Marking Code: 62930
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 7.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: DFN5X6-8L

 AOND62930 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOND62930 Datasheet (PDF)

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 aond62930.pdf

AOND62930 AOND62930

AOND62930TM100V Dual N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 7A Dual N-Ch MOSFET Layout optimized RDS(ON) (at VGS=10V)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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