All MOSFET. AOND62930 Datasheet

 

AOND62930 Datasheet and Replacement


   Type Designator: AOND62930
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 7.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: DFN5X6-8L
 

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AOND62930 Datasheet (PDF)

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AOND62930

AOND62930TM100V Dual N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 7A Dual N-Ch MOSFET Layout optimized RDS(ON) (at VGS=10V)

Datasheet: AONR66924 , AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 , AOND32324 , SPP20N60C3 , AONS18314 , AONS1R1A70 , AONS1R6A70 , AONS20485 , AONS21113 , AONS21309C , AONS21321 , AONS30300 .

History: JCS4N60CB | STU466S

Keywords - AOND62930 MOSFET datasheet

 AOND62930 cross reference
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