AOND62930 Specs and Replacement

Type Designator: AOND62930

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 7.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: DFN5X6-8L

AOND62930 substitution

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AOND62930 datasheet

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AOND62930

AOND62930 TM 100V Dual N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 7A Dual N-Ch MOSFET Layout optimized RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONR66924, AONL32328, AOE66410, AON6152A, AON6264C, AON6590A, AONA66916, AOND32324, SKD502T, AONS18314, AONS1R1A70, AONS1R6A70, AONS20485, AONS21113, AONS21309C, AONS21321, AONS30300

Keywords - AOND62930 MOSFET specs

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