AONS18314 Datasheet and Replacement
Type Designator: AONS18314
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: DFN5X6-8L
- MOSFET Cross-Reference Search
AONS18314 Datasheet (PDF)
aons18314.pdf

AONS1831430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
aons1r6a70.pdf

AONS1R6A70TM700V, aMOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max
aons1r1a70.pdf

AONS1R1A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 20N03L-TO252 | 2N6762JTXV
Keywords - AONS18314 MOSFET datasheet
AONS18314 cross reference
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History: 20N03L-TO252 | 2N6762JTXV



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