AONS18314 Datasheet and Replacement
Type Designator: AONS18314
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: DFN5X6-8L
AONS18314 substitution
AONS18314 Datasheet (PDF)
aons18314.pdf

AONS1831430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
aons1r6a70.pdf

AONS1R6A70TM700V, aMOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max
aons1r1a70.pdf

AONS1R1A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 20A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONL32328 , AOE66410 , AON6152A , AON6264C , AON6590A , AONA66916 , AOND32324 , AOND62930 , IRFB3607 , AONS1R1A70 , AONS1R6A70 , AONS20485 , AONS21113 , AONS21309C , AONS21321 , AONS30300 , AONS30302 .
History: BLM06N03-D | AONP36320 | JCS2N60CB | MTM24N50 | AONR36326C | AONR32314 | 2SK293
Keywords - AONS18314 MOSFET datasheet
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History: BLM06N03-D | AONP36320 | JCS2N60CB | MTM24N50 | AONR36326C | AONR32314 | 2SK293



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