AONS20485 MOSFET Datasheet: P-Ch, 40V, 40A. Full specification with pinout and replacement list

AONS20485 Specs and Replacement

Type Designator: AONS20485

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: DFN5X6-8L

AONS20485 substitution

- MOSFET ⓘ Cross-Reference Search

AONS20485 datasheet

..1. Size:436K aosemi
aons20485.pdf pdf_icon

AONS20485 40V P-Channel MOSFET General Description Product Summary VDS -40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -40A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

9.1. Size:387K 1
aons21357.pdf pdf_icon

AONS21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

9.2. Size:336K aosemi
aons21307.pdf pdf_icon

AONS21307 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

9.3. Size:731K aosemi
aons21321.pdf pdf_icon

AONS21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒