AONS20485 Datasheet and Replacement
Type Designator: AONS20485
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN5X6-8L
AONS20485 substitution
AONS20485 Datasheet (PDF)
aons20485.pdf

AONS2048540V P-Channel MOSFETGeneral Description Product SummaryVDS-40V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=-10V) -40A Low Gate Charge RDS(ON) (at VGS=-10V)
aons21357.pdf

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)
aons21307.pdf

AONS2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aons21321.pdf

AONS2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
Datasheet: AON6264C , AON6590A , AONA66916 , AOND32324 , AOND62930 , AONS18314 , AONS1R1A70 , AONS1R6A70 , IRF1010E , AONS21113 , AONS21309C , AONS21321 , AONS30300 , AONS30302 , AONS30306 , AONS32100 , AONS32106 .
History: 2SK2299 | FCH20N60 | 2301P | SI9933ADY | AOD600A60 | SI8823EDB | TP0101TS-T1
Keywords - AONS20485 MOSFET datasheet
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History: 2SK2299 | FCH20N60 | 2301P | SI9933ADY | AOD600A60 | SI8823EDB | TP0101TS-T1



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