AONS21113 Specs and Replacement

Type Designator: AONS21113

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 2050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: DFN5X6-8L

AONS21113 substitution

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AONS21113 datasheet

 ..1. Size:408K  aosemi
aons21113.pdf pdf_icon

AONS21113

AONS21113 20V P-Channel MOSFET General Description Product Summary VDS -20V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 8.1. Size:387K  1
aons21357.pdf pdf_icon

AONS21113

AONS21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 8.2. Size:336K  aosemi
aons21307.pdf pdf_icon

AONS21113

AONS21307 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 8.3. Size:731K  aosemi
aons21321.pdf pdf_icon

AONS21113

AONS21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

Detailed specifications: AON6590A, AONA66916, AOND32324, AOND62930, AONS18314, AONS1R1A70, AONS1R6A70, AONS20485, 5N65, AONS21309C, AONS21321, AONS30300, AONS30302, AONS30306, AONS32100, AONS32106, AONS32302

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