AONS21113 Datasheet and Replacement
Type Designator: AONS21113
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 138 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 2050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: DFN5X6-8L
- MOSFET Cross-Reference Search
AONS21113 Datasheet (PDF)
aons21113.pdf

AONS2111320V P-Channel MOSFETGeneral Description Product SummaryVDS-20V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)
aons21357.pdf

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)
aons21307.pdf

AONS2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aons21321.pdf

AONS2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SK401 | BSB280N15NZ3G | 12N65KG-TF1-T | AOSN32338C | R5016ANJ | ELM13401CA | DH150N12B
Keywords - AONS21113 MOSFET datasheet
AONS21113 cross reference
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History: 2SK401 | BSB280N15NZ3G | 12N65KG-TF1-T | AOSN32338C | R5016ANJ | ELM13401CA | DH150N12B



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