AONS21309C Datasheet and Replacement
Type Designator: AONS21309C
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 830 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: DFN5X6-8L
AONS21309C substitution
AONS21309C Datasheet (PDF)
aons21309c.pdf

AONS21309C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)
aons21307.pdf

AONS2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aons21357.pdf

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)
aons21321.pdf

AONS2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
Datasheet: AONA66916 , AOND32324 , AOND62930 , AONS18314 , AONS1R1A70 , AONS1R6A70 , AONS20485 , AONS21113 , IRF530 , AONS21321 , AONS30300 , AONS30302 , AONS30306 , AONS32100 , AONS32106 , AONS32302 , AONS32303 .
History: AP9578GH-HF | FQPF6N70 | STW16N65M5
Keywords - AONS21309C MOSFET datasheet
AONS21309C cross reference
AONS21309C equivalent finder
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History: AP9578GH-HF | FQPF6N70 | STW16N65M5



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