All MOSFET. AONS21309C Datasheet

 

AONS21309C Datasheet and Replacement


   Type Designator: AONS21309C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 830 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: DFN5X6-8L
 

 AONS21309C substitution

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AONS21309C Datasheet (PDF)

 ..1. Size:399K  aosemi
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AONS21309C

AONS21309C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)

 6.1. Size:336K  aosemi
 aons21307.pdf pdf_icon

AONS21309C

AONS2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:387K  1
 aons21357.pdf pdf_icon

AONS21309C

AONS2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -36A High Current Capability RDS(ON) (at VGS=-10V)

 7.2. Size:731K  aosemi
 aons21321.pdf pdf_icon

AONS21309C

AONS2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

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Datasheet: AONA66916 , AOND32324 , AOND62930 , AONS18314 , AONS1R1A70 , AONS1R6A70 , AONS20485 , AONS21113 , IRF1010E , AONS21321 , AONS30300 , AONS30302 , AONS30306 , AONS32100 , AONS32106 , AONS32302 , AONS32303 .

History: FQPF7N80 | AMF920NE | FQD7N20TM | FQPF7P06 | AMF922NE | BLS65R165-I | IXTA64N10L2

Keywords - AONS21309C MOSFET datasheet

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 AONS21309C equivalent finder
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