All MOSFET. AONS32100 Datasheet

 

AONS32100 Datasheet and Replacement


   Type Designator: AONS32100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 400 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00073 Ohm
   Package: DFN5X6-8L
      - MOSFET Cross-Reference Search

 

AONS32100 Datasheet (PDF)

 ..1. Size:633K  aosemi
aons32100.pdf pdf_icon

AONS32100

AONS3210025V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:420K  aosemi
aons32106.pdf pdf_icon

AONS32100

AONS3210620V N-Channel MOSFETGeneral Description Product SummaryVDS20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 8.1. Size:384K  aosemi
aons32314.pdf pdf_icon

AONS32100

AONS3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V)

 8.2. Size:693K  aosemi
aons32302.pdf pdf_icon

AONS32100

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HSH15810 | MMP2301 | AP3P7R0EMT | SIHFP350LC | MMN4446 | 2SK823 | HSH90P06

Keywords - AONS32100 MOSFET datasheet

 AONS32100 cross reference
 AONS32100 equivalent finder
 AONS32100 lookup
 AONS32100 substitution
 AONS32100 replacement

 

 
Back to Top

 


 
.