All MOSFET. AONS32100 Datasheet

 

AONS32100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONS32100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 400 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00073 Ohm
   Package: DFN5X6-8L

 AONS32100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONS32100 Datasheet (PDF)

 ..1. Size:633K  aosemi
aons32100.pdf

AONS32100
AONS32100

AONS3210025V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:420K  aosemi
aons32106.pdf

AONS32100
AONS32100

AONS3210620V N-Channel MOSFETGeneral Description Product SummaryVDS20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 8.1. Size:384K  aosemi
aons32314.pdf

AONS32100
AONS32100

AONS3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V)

 8.2. Size:693K  aosemi
aons32302.pdf

AONS32100
AONS32100

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:634K  aosemi
aons32310.pdf

AONS32100
AONS32100

AONS3231030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)

 8.4. Size:387K  aosemi
aons32306.pdf

AONS32100
AONS32100

AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)

 8.5. Size:403K  aosemi
aons32303.pdf

AONS32100
AONS32100

AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)

 8.6. Size:754K  aosemi
aons32304.pdf

AONS32100
AONS32100

AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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