AONS32100 MOSFET Datasheet: N-Ch, 25V, 400A. Full specification with pinout and replacement list

AONS32100 Specs and Replacement

Type Designator: AONS32100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 400 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00073 Ohm

Package: DFN5X6-8L

AONS32100 substitution

- MOSFET ⓘ Cross-Reference Search

AONS32100 datasheet

..1. Size:633K aosemi
aons32100.pdf pdf_icon

AONS32100 25V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

6.1. Size:420K aosemi
aons32106.pdf pdf_icon

AONS32106 20V N-Channel MOSFET General Description Product Summary VDS 20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) ... See More ⇒

8.1. Size:384K aosemi
aons32314.pdf pdf_icon

AONS32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:693K aosemi
aons32302.pdf pdf_icon

AONS32302 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒