AONS34308C Specs and Replacement

Type Designator: AONS34308C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: DFN5X6-8L

AONS34308C substitution

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AONS34308C datasheet

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AONS34308C

AONS34308C 30V N-Channel MOSFET General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:405K  aosemi
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AONS34308C

AONS34304C 30V N-Channel MOSFET General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:405K  aosemi
aons30300.pdf pdf_icon

AONS34308C

AONS30300 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:769K  aosemi
aons38108.pdf pdf_icon

AONS34308C

AONS38108 25V N-Channel MOSFET General Description Product Summary VDS 25V Trench Power MOSFET technology Extremely Low RDS(ON) ID (at VGS=10V) 355A Optimized switching performance (low RDS(ON)*Qg) RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS30306, AONS32100, AONS32106, AONS32302, AONS32303, AONS32304, AONS32310, AONS34304C, 4N60, AONS36302, AONS36303, AONS36304, AONS36306, AONS36308, AONS36312, AONS36314, AONS36316

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.