AONS66909 Datasheet and Replacement
Type Designator: AONS66909
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 1110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: DFN5X6-8L
AONS66909 substitution
AONS66909 Datasheet (PDF)
aons66909.pdf

AONS66909TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 160A Low RDS(ON) Excellent QG x RDS(ON) RDS(ON) (at VGS=10V)
aons66908.pdf

AONS66908TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 158A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aons66916.pdf

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66923.pdf

AONS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Datasheet: AONS66617 , AONS66620 , AONS66641 , AONS66641T , AONS66811 , AONS66814 , AONS66817 , AONS66908 , IRF640N , AONS66916T , AONS66917 , AONS66917T , AONS66919 , AONS66920 , AONS66923 , AONS67614 , AONS68520 .
History: AP9950AGH-HF | AON7516
Keywords - AONS66909 MOSFET datasheet
AONS66909 cross reference
AONS66909 equivalent finder
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History: AP9950AGH-HF | AON7516



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