AONS66909 Specs and Replacement

Type Designator: AONS66909

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 1110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: DFN5X6-8L

AONS66909 substitution

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AONS66909 datasheet

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AONS66909

AONS66909 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 160A Low RDS(ON) Excellent QG x RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

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 aons66908.pdf pdf_icon

AONS66909

AONS66908 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 158A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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AONS66909

AONS66916 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:771K  aosemi
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AONS66909

AONS66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS66617, AONS66620, AONS66641, AONS66641T, AONS66811, AONS66814, AONS66817, AONS66908, IRFB4110, AONS66916T, AONS66917, AONS66917T, AONS66919, AONS66920, AONS66923, AONS67614, AONS68520

Keywords - AONS66909 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs