All MOSFET. AONS66916T Datasheet

 

AONS66916T Datasheet and Replacement


   Type Designator: AONS66916T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 258 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 184 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6-8L
 

 AONS66916T substitution

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AONS66916T Datasheet (PDF)

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AONS66916T

AONS66916TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 184A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:313K  aosemi
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AONS66916T

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:340K  aosemi
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AONS66916T

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:419K  aosemi
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AONS66916T

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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Datasheet: AONS66620 , AONS66641 , AONS66641T , AONS66811 , AONS66814 , AONS66817 , AONS66908 , AONS66909 , IRF630 , AONS66917 , AONS66917T , AONS66919 , AONS66920 , AONS66923 , AONS67614 , AONS68520 , AONS74304 .

History: AM6411P

Keywords - AONS66916T MOSFET datasheet

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