AONS67614 Specs and Replacement

Type Designator: AONS67614

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: DFN5X6-8L

AONS67614 substitution

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AONS67614 datasheet

 ..1. Size:780K  aosemi
aons67614.pdf pdf_icon

AONS67614

AONS67614 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:336K  1
aons62922.pdf pdf_icon

AONS67614

AONS62922 TM 120V N-Channel AlphaSGT General Description Product Summary VDS 120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:362K  aosemi
aons66402t.pdf pdf_icon

AONS67614

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

 9.3. Size:313K  aosemi
aons66916.pdf pdf_icon

AONS67614

AONS66916 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS66908, AONS66909, AONS66916T, AONS66917, AONS66917T, AONS66919, AONS66920, AONS66923, AON6414A, AONS68520, AONS74304, AONS74306, AONS74312, AONS77402, AONS850A70, AONX36320, AONX36322

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.