AONS67614 Datasheet and Replacement
Type Designator: AONS67614
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 78
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 745
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029
Ohm
Package:
DFN5X6-8L
- MOSFET Cross-Reference Search
AONS67614 Datasheet (PDF)
..1. Size:780K aosemi
aons67614.pdf 
AONS67614TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Excellent QG x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
9.1. Size:336K 1
aons62922.pdf 
AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)
9.2. Size:362K aosemi
aons66402t.pdf 
AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.3. Size:313K aosemi
aons66916.pdf 
AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:370K aosemi
aons66524.pdf 
AONS66524TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power AlphaSGTTM technology ID (at VGS=20V) 56A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:412K aosemi
aons66609.pdf 
AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:771K aosemi
aons66923.pdf 
AONS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.7. Size:419K aosemi
aons66641t.pdf 
AONS66641TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:427K aosemi
aons66407.pdf 
AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:381K aosemi
aons66521.pdf 
AONS66521150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Low RDS(ON) and Gate Charge ID (at VGS=10V) 100A Enhanced Robustness RDS(ON) (at VGS=10V)
9.10. Size:377K aosemi
aons66612.pdf 
AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)
9.11. Size:411K aosemi
aons66620.pdf 
AONS66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
9.12. Size:336K aosemi
aons62922.pdf 
AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)
9.13. Size:364K aosemi
aons62606.pdf 
AONS6260660V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.14. Size:340K aosemi
aons66917t.pdf 
AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.15. Size:416K aosemi
aons66908.pdf 
AONS66908TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 158A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.16. Size:419K aosemi
aons66919.pdf 
AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.17. Size:414K aosemi
aons66408.pdf 
AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
9.18. Size:436K aosemi
aons66607.pdf 
AONS6660760V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.19. Size:762K aosemi
aons66920.pdf 
AONS66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.20. Size:400K aosemi
aons68520.pdf 
AONS68520TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power MOSFET technology Low RDS(ON) and optimized swiching performance ID (at VGS=10V) 102A High Current Capability RDS(ON) (at VGS=10V)
9.21. Size:329K aosemi
aons62618.pdf 
AONS62618TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.22. Size:415K aosemi
aons66415.pdf 
AONS66415TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 150A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.23. Size:429K aosemi
aons66814.pdf 
AONS66814TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON) RDS(ON) (at VGS=10V)
9.24. Size:352K aosemi
aons62920.pdf 
AONS62920TM100V Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
9.25. Size:440K aosemi
aons66605.pdf 
AONS6660560V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.26. Size:410K aosemi
aons66615.pdf 
AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.27. Size:337K aosemi
aons62602.pdf 
AONS62602TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.28. Size:336K aosemi
aons66917.pdf 
AONS66917TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.29. Size:405K aosemi
aons66405.pdf 
AONS66405TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)
9.30. Size:362K aosemi
aons62614t.pdf 
AONS62614TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 170A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.31. Size:424K aosemi
aons66811.pdf 
AONS66811TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 287A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)
9.32. Size:447K aosemi
aons66617.pdf 
AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)
9.33. Size:322K aosemi
aons66402.pdf 
AONS66402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.34. Size:335K aosemi
aons62614.pdf 
AONS62614TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.35. Size:422K aosemi
aons66909.pdf 
AONS66909TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 160A Low RDS(ON) Excellent QG x RDS(ON) RDS(ON) (at VGS=10V)
9.36. Size:408K aosemi
aons66405t.pdf 
AONS66405TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 385A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)
9.37. Size:380K aosemi
aons66520.pdf 
AONS66520TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.38. Size:445K aosemi
aons66613.pdf 
AONS66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 196A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)
9.39. Size:885K aosemi
aons660a70f.pdf 
AONS660A70FTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
9.40. Size:493K aosemi
aons62530.pdf 
AONS62530TM150V N-Channel MOSGeneral Description Product SummaryVDS150V Latest Trench Power MOS (MOS MV) technology Low Gate Charge ID (at VGS=10V) 19A Optimized for fast-switching applications RDS(ON) (at VGS=10V)
9.41. Size:407K aosemi
aons66641.pdf 
AONS66641TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.42. Size:715K aosemi
aons66612t.pdf 
AONS66612TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.43. Size:427K aosemi
aons66817.pdf 
AONS66817TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.44. Size:416K aosemi
aons66609t.pdf 
AONS66609TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.45. Size:345K aosemi
aons66916t.pdf 
AONS66916TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 184A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.46. Size:720K aosemi
aons66614.pdf 
AONS6661460V N-Channel AlphaSGT TMGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.47. Size:422K aosemi
aons65625.pdf 
AONS6562560V P-Channel MOSFETGeneral Description Product SummaryVDS-60V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -42A High Current Capability RDS(ON) (at VGS=-10V)
9.48. Size:667K aosemi
aons660a60.pdf 
AONS660A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max
9.49. Size:328K aosemi
aons66406.pdf 
AONS66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 30A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.50. Size:428K aosemi
aons66615t.pdf 
AONS66615TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 114A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, 5N60
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
History: NCEP020N60GU
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| STD4NK60Z
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| P1006BK
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| MTB30P06V
Keywords - AONS67614 MOSFET datasheet
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AONS67614 equivalent finder
AONS67614 lookup
AONS67614 substitution
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