All MOSFET. AONS74312 Datasheet

 

AONS74312 Datasheet and Replacement


   Type Designator: AONS74312
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: DFN5X6-8L
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AONS74312 Datasheet (PDF)

 ..1. Size:404K  aosemi
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AONS74312

AONS7431230V N-Channel MOSFET General Description Product SummaryVDS 30V Trench Power MOSFET technology Very Low RDS(on) ID (at VGS=10V) 210A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:393K  aosemi
 aons74306.pdf pdf_icon

AONS74312

AONS7430630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 370A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:396K  aosemi
 aons74304.pdf pdf_icon

AONS74312

AONS7430430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 440A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:368K  aosemi
 aons77402.pdf pdf_icon

AONS74312

AONS77402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 335A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

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History: FQD4N25TM | 2SK3192

Keywords - AONS74312 MOSFET datasheet

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