AONS850A70 Specs and Replacement

Type Designator: AONS850A70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: DFN5X6-8L

AONS850A70 substitution

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AONS850A70 datasheet

 ..1. Size:660K  aosemi
 aons850a70.pdf pdf_icon

AONS850A70

AONS850A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AONS66920, AONS66923, AONS67614, AONS68520, AONS74304, AONS74306, AONS74312, AONS77402, IRFP250N, AONX36320, AONX36322, AONX36324, AONX38168, AONX38168A, AONX38320, AONY36302, AONY36304

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