All MOSFET. AONS850A70 Datasheet

 

AONS850A70 Datasheet and Replacement


   Type Designator: AONS850A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: DFN5X6-8L
 

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AONS850A70 Datasheet (PDF)

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AONS850A70

AONS850A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AONS66920 , AONS66923 , AONS67614 , AONS68520 , AONS74304 , AONS74306 , AONS74312 , AONS77402 , IRFP250N , AONX36320 , AONX36322 , AONX36324 , AONX38168 , AONX38168A , AONX38320 , AONY36302 , AONY36304 .

History: FDU8870 | MSK7D5N60F | MSK7D5N60T | BL7N80-B

Keywords - AONS850A70 MOSFET datasheet

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