AONX38168 Datasheet and Replacement
Type Designator: AONX38168
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: DFN5X6-8L
AONX38168 substitution
AONX38168 Datasheet (PDF)
aonx38168.pdf

AONX3816825V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 60A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aonx38168a.pdf

AONX38168A25V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 87A 226A Low Gate Charge RDS(ON) (at VGS=10V)
aonx38320.pdf

AONX3832030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom Source Technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 66A 233A Low Gate Charge RDS(ON) (at VGS=10V)
aonx36322.pdf

AONX3632230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONS74304 , AONS74306 , AONS74312 , AONS77402 , AONS850A70 , AONX36320 , AONX36322 , AONX36324 , IRFP260 , AONX38168A , AONX38320 , AONY36302 , AONY36304 , AONY36354 , AONY36306 , AONY36356 , AONZ66412 .
Keywords - AONX38168 MOSFET datasheet
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