All MOSFET. AONZ66412 Datasheet

 

AONZ66412 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONZ66412
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 182 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: DFN5X6F-8L

 AONZ66412 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONZ66412 Datasheet (PDF)

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 aonz66412.pdf

AONZ66412 AONZ66412

AONZ66412TM40V Dual Asymmetric N-Channel AlphaSGTGeneral Description Product SummaryQ1 Q2VDS 40V 40V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 182A 182A Low Gate Charge RDS(ON) (at VGS=10V)

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