AONZ66412 Specs and Replacement

Type Designator: AONZ66412

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 182 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: DFN5X6F-8L

AONZ66412 substitution

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AONZ66412 datasheet

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AONZ66412

AONZ66412 TM 40V Dual Asymmetric N-Channel AlphaSGT General Description Product Summary Q1 Q2 VDS 40V 40V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 182A 182A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONX38168, AONX38168A, AONX38320, AONY36302, AONY36304, AONY36354, AONY36306, AONY36356, IRFP260, AONV095A60, AONV110A60, AONV125A60, AONV140A60, AONV180A60, AONV200A70, AONV210A60, AONV310A60

Keywords - AONZ66412 MOSFET specs

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