AONV095A60 Datasheet and Replacement
Type Designator: AONV095A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: DFN8X8-4L
AONV095A60 substitution
AONV095A60 Datasheet (PDF)
aonv095a60.pdf

AONV095A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONX38168A , AONX38320 , AONY36302 , AONY36304 , AONY36354 , AONY36306 , AONY36356 , AONZ66412 , 2SK3568 , AONV110A60 , AONV125A60 , AONV140A60 , AONV180A60 , AONV200A70 , AONV210A60 , AONV310A60 , AONV420A60 .
History: SQJ402EP | AP4455GYT | BSB019N03LXG | AOB284L | IXFT24N50Q
Keywords - AONV095A60 MOSFET datasheet
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History: SQJ402EP | AP4455GYT | BSB019N03LXG | AOB284L | IXFT24N50Q



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