All MOSFET. AONV200A70 Datasheet

 

AONV200A70 Datasheet and Replacement


   Type Designator: AONV200A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: DFN8X8-4L
 

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AONV200A70 Datasheet (PDF)

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AONV200A70

AONV200A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

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AONV200A70

AONV210A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AONY36306 , AONY36356 , AONZ66412 , AONV095A60 , AONV110A60 , AONV125A60 , AONV140A60 , AONV180A60 , AON7410 , AONV210A60 , AONV310A60 , AONV420A60 , AONV420A70 , AOLF66412 , AOLF66413 , AOLF66417 , AOLF66610 .

History: IPL65R230C7

Keywords - AONV200A70 MOSFET datasheet

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