AONV200A70 Specs and Replacement

Type Designator: AONV200A70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: DFN8X8-4L

AONV200A70 substitution

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AONV200A70 datasheet

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AONV200A70

AONV200A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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AONV200A70

AONV210A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AONY36306, AONY36356, AONZ66412, AONV095A60, AONV110A60, AONV125A60, AONV140A60, AONV180A60, AON7410, AONV210A60, AONV310A60, AONV420A60, AONV420A70, AOLF66412, AOLF66413, AOLF66417, AOLF66610

Keywords - AONV200A70 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.