All MOSFET. AONV210A60 Datasheet

 

AONV210A60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONV210A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: DFN8X8-4L

 AONV210A60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONV210A60 Datasheet (PDF)

 ..1. Size:661K  aosemi
 aonv210a60.pdf

AONV210A60 AONV210A60

AONV210A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:497K  aosemi
 aonv200a70.pdf

AONV210A60 AONV210A60

AONV200A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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