AONV210A60 Specs and Replacement
Type Designator: AONV210A60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: DFN8X8-4L
AONV210A60 substitution
- MOSFET ⓘ Cross-Reference Search
AONV210A60 datasheet
aonv210a60.pdf
AONV210A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aonv200a70.pdf
AONV200A70 TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AONY36356, AONZ66412, AONV095A60, AONV110A60, AONV125A60, AONV140A60, AONV180A60, AONV200A70, 12N60, AONV310A60, AONV420A60, AONV420A70, AOLF66412, AOLF66413, AOLF66417, AOLF66610, AOLF66910
Keywords - AONV210A60 MOSFET specs
AONV210A60 cross reference
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