All MOSFET. AOLF66417 Datasheet

 

AOLF66417 Datasheet and Replacement


   Type Designator: AOLF66417
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: LFPAK5X6-4L
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AOLF66417 Datasheet (PDF)

 ..1. Size:432K  aosemi
 aolf66417.pdf pdf_icon

AOLF66417

AOLF66417TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 200A Low RDS(ON) RDS(ON) (at VGS=10V)

 6.1. Size:421K  aosemi
 aolf66413.pdf pdf_icon

AOLF66417

AOLF66413TM 40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 357A Low RDS(ON) RDS(ON) (at VGS=10V)

 6.2. Size:436K  aosemi
 aolf66412.pdf pdf_icon

AOLF66417

AOLF66412TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 352A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.1. Size:614K  aosemi
 aolf66610.pdf pdf_icon

AOLF66417

AOLF66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 294A Low RDS(ON) RDS(ON) (at VGS=10V)

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Keywords - AOLF66417 MOSFET datasheet

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