AOLF66610 Specs and Replacement

Type Designator: AOLF66610

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 294 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: LFPAK5X6-4L

AOLF66610 substitution

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AOLF66610 datasheet

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 aolf66610.pdf pdf_icon

AOLF66610

AOLF66610 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 294A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:421K  aosemi
 aolf66413.pdf pdf_icon

AOLF66610

AOLF66413 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 357A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:432K  aosemi
 aolf66417.pdf pdf_icon

AOLF66610

AOLF66417 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 200A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:436K  aosemi
 aolf66412.pdf pdf_icon

AOLF66610

AOLF66412 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 352A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONV200A70, AONV210A60, AONV310A60, AONV420A60, AONV420A70, AOLF66412, AOLF66413, AOLF66417, NCEP15T14, AOLF66910, AOSN32128, AOSN32338C, AOSX21319C, AOSX32128, AO4264C, AOSD21307, AOSD21311C

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.