AOLF66610 MOSFET. Datasheet pdf. Equivalent

   Type Designator: AOLF66610
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.3 V
   |Id|ⓘ - Maximum Drain Current: 294 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: LFPAK5X6-4L

AOLF66610 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS