All MOSFET. AOLF66610 Datasheet

 

AOLF66610 Datasheet and Replacement


   Type Designator: AOLF66610
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 294 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: LFPAK5X6-4L
 

 AOLF66610 substitution

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AOLF66610 Datasheet (PDF)

 ..1. Size:614K  aosemi
 aolf66610.pdf pdf_icon

AOLF66610

AOLF66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 294A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.1. Size:421K  aosemi
 aolf66413.pdf pdf_icon

AOLF66610

AOLF66413TM 40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 357A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.2. Size:432K  aosemi
 aolf66417.pdf pdf_icon

AOLF66610

AOLF66417TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 200A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.3. Size:436K  aosemi
 aolf66412.pdf pdf_icon

AOLF66610

AOLF66412TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 352A Low RDS(ON) RDS(ON) (at VGS=10V)

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Datasheet: AONV200A70 , AONV210A60 , AONV310A60 , AONV420A60 , AONV420A70 , AOLF66412 , AOLF66413 , AOLF66417 , IRFP450 , AOLF66910 , AOSN32128 , AOSN32338C , AOSX21319C , AOSX32128 , AO4264C , AOSD21307 , AOSD21311C .

History: VBZM30N06

Keywords - AOLF66610 MOSFET datasheet

 AOLF66610 cross reference
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