All MOSFET. AOLF66910 Datasheet

 

AOLF66910 Datasheet and Replacement


   Type Designator: AOLF66910
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 187 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 1080 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: LFPAK5X6-4L
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AOLF66910 Datasheet (PDF)

 ..1. Size:443K  aosemi
 aolf66910.pdf pdf_icon

AOLF66910

AOLF66910TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 187A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.1. Size:421K  aosemi
 aolf66413.pdf pdf_icon

AOLF66910

AOLF66413TM 40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 357A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.2. Size:432K  aosemi
 aolf66417.pdf pdf_icon

AOLF66910

AOLF66417TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 200A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.3. Size:614K  aosemi
 aolf66610.pdf pdf_icon

AOLF66910

AOLF66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 294A Low RDS(ON) RDS(ON) (at VGS=10V)

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History: FDD7N25LZ | FDM50R120AN4G | AOK66518 | IXFX21N100F | STE22N80 | STD7N80K5

Keywords - AOLF66910 MOSFET datasheet

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