All MOSFET. AOSN32338C Datasheet

 

AOSN32338C Datasheet and Replacement


   Type Designator: AOSN32338C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: SC70
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AOSN32338C Datasheet (PDF)

 ..1. Size:313K  aosemi
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AOSN32338C

AOSN32338C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 3.7A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:292K  aosemi
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AOSN32338C

AOSN3212820V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=10V) 3.2A Low Gate Charge RDS(ON) (at VGS=4.5V)

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: CS840FA9D | ELM13401CA | 12N65KG-TF1-T | AP98T03GS | R5016ANJ | DH150N12B | BSB280N15NZ3G

Keywords - AOSN32338C MOSFET datasheet

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