All MOSFET. AOSN32338C Datasheet

 

AOSN32338C Datasheet and Replacement


   Type Designator: AOSN32338C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: SC70
 

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AOSN32338C Datasheet (PDF)

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AOSN32338C

AOSN32338C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 3.7A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:292K  aosemi
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AOSN32338C

AOSN3212820V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=10V) 3.2A Low Gate Charge RDS(ON) (at VGS=4.5V)

Datasheet: AONV420A60 , AONV420A70 , AOLF66412 , AOLF66413 , AOLF66417 , AOLF66610 , AOLF66910 , AOSN32128 , IRF1407 , AOSX21319C , AOSX32128 , AO4264C , AOSD21307 , AOSD21311C , AOSD21313C , AOSD26313C , AOSD32334C .

History: PJP3NA80 | BRCS030N10SHRA | HM4922 | BRCS030N04DP | LSE65R099GF | STB33N65M2 | MTP1N80E

Keywords - AOSN32338C MOSFET datasheet

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