AOSX21319C Specs and Replacement

Type Designator: AOSX21319C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SC70-6L

AOSX21319C substitution

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AOSX21319C datasheet

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 aosx21319c.pdf pdf_icon

AOSX21319C

AOSX21319C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.6A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

Detailed specifications: AONV420A70, AOLF66412, AOLF66413, AOLF66417, AOLF66610, AOLF66910, AOSN32128, AOSN32338C, TK10A60D, AOSX32128, AO4264C, AOSD21307, AOSD21311C, AOSD21313C, AOSD26313C, AOSD32334C, AOSD32338C

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.