All MOSFET. AOSX21319C Datasheet

 

AOSX21319C Datasheet and Replacement


   Type Designator: AOSX21319C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SC70-6L
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AOSX21319C Datasheet (PDF)

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AOSX21319C

AOSX21319C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.6A Low Gate Charge RDS(ON) (at VGS=-10V)

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History: CHM85A3PAGP | ALD1103DB | SML100L16 | SQ9407EY-T1 | TK7P65W | ZXM66P03N8

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