AOSD21307 Specs and Replacement
Type Designator: AOSD21307
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SO8
AOSD21307 substitution
- MOSFET ⓘ Cross-Reference Search
AOSD21307 datasheet
aosd21307.pdf
AOSD21307 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
aosd21313c.pdf
AOSD21313C 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
aosd21311c.pdf
AOSD21311C 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
aosd26313c.pdf
AOSD26313C 30V Complementary MOSFET General Description Product Summary P-Channel N-Channel Latest Advanced Trench Technology VDS= -30V VDS= 30V Low RDS(ON) ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) High Current Capability RDS(ON) RDS(ON) RoHS and Halogen-Free Compliant ... See More ⇒
Detailed specifications: AOLF66417, AOLF66610, AOLF66910, AOSN32128, AOSN32338C, AOSX21319C, AOSX32128, AO4264C, 4N60, AOSD21311C, AOSD21313C, AOSD26313C, AOSD32334C, AOSD32338C, AOSP21321, AOSP32320C, AOSP36326C
Keywords - AOSD21307 MOSFET specs
AOSD21307 cross reference
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