All MOSFET. AOSP21321 Datasheet

 

AOSP21321 Datasheet and Replacement


   Type Designator: AOSP21321
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SO8
 

 AOSP21321 substitution

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AOSP21321 Datasheet (PDF)

 ..1. Size:258K  aosemi
 aosp21321.pdf pdf_icon

AOSP21321

AOSP2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -11A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:295K  aosemi
 aosp21357.pdf pdf_icon

AOSP21321

AOSP2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -16A High Current capability RDS(ON) (at VGS=-10V)

 7.2. Size:308K  aosemi
 aosp21307.pdf pdf_icon

AOSP21321

AOSP2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

Datasheet: AOSX32128 , AO4264C , AOSD21307 , AOSD21311C , AOSD21313C , AOSD26313C , AOSD32334C , AOSD32338C , SKD502T , AOSP32320C , AOSP36326C , AOSP62530 , AOSP62626E , AOSP66919 , AOSP66920 , AOSP66923 , AOSP66925 .

History: IRFP31N50L | TPB65R260M

Keywords - AOSP21321 MOSFET datasheet

 AOSP21321 cross reference
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