AOSP21321 Specs and Replacement

Type Designator: AOSP21321

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SO8

AOSP21321 substitution

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AOSP21321 datasheet

 ..1. Size:258K  aosemi
 aosp21321.pdf pdf_icon

AOSP21321

AOSP21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -11A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 7.1. Size:375K  aosemi
 aosp21311c.pdf pdf_icon

AOSP21321

AOSP21311C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -6.5A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 7.2. Size:295K  aosemi
 aosp21357.pdf pdf_icon

AOSP21321

AOSP21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -16A High Current capability RDS(ON) (at VGS=-10V) ... See More ⇒

 7.3. Size:308K  aosemi
 aosp21307.pdf pdf_icon

AOSP21321

AOSP21307 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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Detailed specifications: AOSX32128, AO4264C, AOSD21307, AOSD21311C, AOSD21313C, AOSD26313C, AOSD32334C, AOSD32338C, RFP50N06, AOSP32320C, AOSP36326C, AOSP62530, AOSP62626E, AOSP66919, AOSP66920, AOSP66923, AOSP66925

Keywords - AOSP21321 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs