AOSP36326C Specs and Replacement

Type Designator: AOSP36326C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 233 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SO8

AOSP36326C substitution

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AOSP36326C datasheet

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 aosp36326c.pdf pdf_icon

AOSP36326C

AOSP36326C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:322K  aosemi
 aosp32320c.pdf pdf_icon

AOSP36326C

AOSP32320C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:319K  aosemi
 aosp32314.pdf pdf_icon

AOSP36326C

AOSP32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

 9.3. Size:431K  aosemi
 aosp32368.pdf pdf_icon

AOSP36326C

AOSP32368 30V N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOSD21307, AOSD21311C, AOSD21313C, AOSD26313C, AOSD32334C, AOSD32338C, AOSP21321, AOSP32320C, AO3407, AOSP62530, AOSP62626E, AOSP66919, AOSP66920, AOSP66923, AOSP66925, AOSS21115C, AOSS21311C

Keywords - AOSP36326C MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.