AOSS32136C Specs and Replacement

Type Designator: AOSS32136C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT23

AOSS32136C substitution

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AOSS32136C datasheet

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AOSS32136C

AOSS32136C 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 6.5A Low Gate Charge RDS(ON) (at VGS=4.5V) ... See More ⇒

 7.1. Size:305K  aosemi
 aoss32128.pdf pdf_icon

AOSS32136C

AOSS32128 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=10V) 3.6A Low Gate Charge RDS(ON) (at VGS=4.5V) ... See More ⇒

 8.1. Size:332K  aosemi
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AOSS32136C

AOSS32334C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:338K  aosemi
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AOSS32136C

AOSS32338C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 4A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOSP66920, AOSP66923, AOSP66925, AOSS21115C, AOSS21311C, AOSS21319C, AOSS21329, AOSS32128, IRFB31N20D, AOSS32334C, AOSS32338C, AO3160E, AOT080A60L, AOT095A60FDL, AOT095A60L, AOT125A60L, AOT160A60L

Keywords - AOSS32136C MOSFET specs

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