All MOSFET. AOSS32136C Datasheet

 

AOSS32136C Datasheet and Replacement


   Type Designator: AOSS32136C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23
 

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AOSS32136C Datasheet (PDF)

 ..1. Size:333K  aosemi
 aoss32136c.pdf pdf_icon

AOSS32136C

AOSS32136C20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 6.5A Low Gate Charge RDS(ON) (at VGS=4.5V)

 7.1. Size:305K  aosemi
 aoss32128.pdf pdf_icon

AOSS32136C

AOSS3212820V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=10V) 3.6A Low Gate Charge RDS(ON) (at VGS=4.5V)

 8.1. Size:332K  aosemi
 aoss32334c.pdf pdf_icon

AOSS32136C

AOSS32334C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:338K  aosemi
 aoss32338c.pdf pdf_icon

AOSS32136C

AOSS32338C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 4A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOSP66920 , AOSP66923 , AOSP66925 , AOSS21115C , AOSS21311C , AOSS21319C , AOSS21329 , AOSS32128 , IRFB31N20D , AOSS32334C , AOSS32338C , AO3160E , AOT080A60L , AOT095A60FDL , AOT095A60L , AOT125A60L , AOT160A60L .

History: IPL65R310E6 | AOSS32338C | IPL65R650C6S | SIHG47N60AEF | IPL65R420E6 | AONV420A60

Keywords - AOSS32136C MOSFET datasheet

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