All MOSFET. AOT080A60L Datasheet

 

AOT080A60L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOT080A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 328 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO220

 AOT080A60L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT080A60L Datasheet (PDF)

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 aot080a60l.pdf

AOT080A60L AOT080A60L

AOT080A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max

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