All MOSFET. AOT080A60L Datasheet

 

AOT080A60L Datasheet and Replacement


   Type Designator: AOT080A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 328 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO220
 

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AOT080A60L Datasheet (PDF)

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AOT080A60L

AOT080A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOSS21311C , AOSS21319C , AOSS21329 , AOSS32128 , AOSS32136C , AOSS32334C , AOSS32338C , AO3160E , 60N06 , AOT095A60FDL , AOT095A60L , AOT125A60L , AOT160A60L , AOT190A60CL , AOT190A60L , AOT280A60L , AOT29S50L .

History: RCX051N25 | DMN2041LSD | VB7638 | TPM4105EC6 | DMN2027USS | RQK2501YGDQA | IRF9328

Keywords - AOT080A60L MOSFET datasheet

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