AOT080A60L Specs and Replacement

Type Designator: AOT080A60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 328 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 116 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO220

AOT080A60L substitution

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AOT080A60L datasheet

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AOT080A60L

AOT080A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AOSS21311C, AOSS21319C, AOSS21329, AOSS32128, AOSS32136C, AOSS32334C, AOSS32338C, AO3160E, IRFZ48N, AOT095A60FDL, AOT095A60L, AOT125A60L, AOT160A60L, AOT190A60CL, AOT190A60L, AOT280A60L, AOT29S50L

Keywords - AOT080A60L MOSFET specs

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