All MOSFET. AOT095A60L Datasheet

 

AOT095A60L Datasheet and Replacement


   Type Designator: AOT095A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 378 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO220
 

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AOT095A60L Datasheet (PDF)

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AOT095A60L

AOTF095A60L/AOT095A60L/AOB095A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max

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AOT095A60L

AOT095A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 120A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOSS21329 , AOSS32128 , AOSS32136C , AOSS32334C , AOSS32338C , AO3160E , AOT080A60L , AOT095A60FDL , IRF1405 , AOT125A60L , AOT160A60L , AOT190A60CL , AOT190A60L , AOT280A60L , AOT29S50L , AOT360A70L , AOT380A60CL .

History: SIR416DP | 2SK3646-01SJ | HM4490 | BUK7Y1R4-40H | INJ0312AP1 | SGSP474 | SIR432DP

Keywords - AOT095A60L MOSFET datasheet

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