AOTF600A60L MOSFET: N-Ch, 600V, 8A. Full datasheet with pinout, specifications and replacement transistor list

..1. Size:483K aosemi
aotf600a60l.pdf pdf_icon

AOTF600A60L/AOT600A60L/AOB600A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

6.1. Size:793K aosemi
aotf600a70l.pdf pdf_icon

AOTF600A70L/AOT600A70L/AOB600A70LTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

6.2. Size:750K aosemi
aotf600a70fl.pdf pdf_icon

AOTF600A70FL/AOT600A70FLTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

9.1. Size:742K aosemi
aotf66920l.pdf pdf_icon

AOTF66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 41A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

9.2. Size:370K aosemi
aotf66811l.pdf pdf_icon

AOTF66811LTM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 80A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)

9.3. Size:184K aosemi
aotf6n90.pdf pdf_icon

AOTF6N90900V,6A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF6N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 6Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

9.4. Size:376K aosemi
aotf66613l.pdf pdf_icon

AOTF66613LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 90A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

9.5. Size:365K aosemi
aotf66919l.pdf pdf_icon

AOTF66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

9.6. Size:723K aosemi
aotf66616l.pdf pdf_icon

AOTF66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

9.7. Size:252K inchange semiconductor
aotf6n90.pdf pdf_icon

isc N-Channel MOSFET Transistor AOTF6N90FEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

AOTF600A60L Datasheet (PDF)

Keywords - AOTF600A60L MOSFET datasheet

LIST

Last Update

Popular searches

AllTransistors(C)