Справочник MOSFET. AOTF600A60L

 

AOTF600A60L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF600A60L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 27.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 19 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AOTF600A60L

 

 

AOTF600A60L Datasheet (PDF)

 ..1. Size:483K  aosemi
 aotf600a60l.pdf

AOTF600A60L AOTF600A60L

AOTF600A60L/AOT600A60L/AOB600A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

 6.1. Size:793K  aosemi
 aotf600a70l.pdf

AOTF600A60L AOTF600A60L

AOTF600A70L/AOT600A70L/AOB600A70LTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 6.2. Size:750K  aosemi
 aotf600a70fl.pdf

AOTF600A60L AOTF600A60L

AOTF600A70FL/AOT600A70FLTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:742K  aosemi
 aotf66920l.pdf

AOTF600A60L AOTF600A60L

AOTF66920LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 41A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.2. Size:370K  aosemi
 aotf66811l.pdf

AOTF600A60L AOTF600A60L

AOTF66811LTM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 80A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)

 9.3. Size:184K  aosemi
 aotf6n90.pdf

AOTF600A60L AOTF600A60L

AOTF6N90900V,6A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF6N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 6Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.4. Size:376K  aosemi
 aotf66613l.pdf

AOTF600A60L AOTF600A60L

AOTF66613LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 90A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 9.5. Size:365K  aosemi
 aotf66919l.pdf

AOTF600A60L AOTF600A60L

AOTF66919LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 50A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.6. Size:723K  aosemi
 aotf66616l.pdf

AOTF600A60L AOTF600A60L

AOTF66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 9.7. Size:252K  inchange semiconductor
 aotf6n90.pdf

AOTF600A60L AOTF600A60L

isc N-Channel MOSFET Transistor AOTF6N90FEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

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