AOK031A60FD Datasheet and Replacement
Type Designator: AOK031A60FD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 462 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 76 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 185 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: TO247
AOK031A60FD substitution
AOK031A60FD Datasheet (PDF)
aok031a60fd.pdf

AOK031A60FDTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 304A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOTF600A70FL , AOTF600A70L , AOTF66613L , AOTF66616L , AOTF66811L , AOTF66919L , AOTF66920L , AOTF780A70L , K4145 , AOK040A60 , AOK042A60FD , AOK065A60 , AOK065A60FD , AOK095A60 , AOK095A60FD , AOK095A60FDL , AOK125A60 .
History: DMN63D8LW | OSG65R038H4ZF | AP3A010MT | P9006EVG | 2N4220 | FQB16N25CTM | SM3116NAFP
Keywords - AOK031A60FD MOSFET datasheet
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History: DMN63D8LW | OSG65R038H4ZF | AP3A010MT | P9006EVG | 2N4220 | FQB16N25CTM | SM3116NAFP



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