AOK031A60FD Specs and Replacement

Type Designator: AOK031A60FD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 462 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 185 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: TO247

AOK031A60FD substitution

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AOK031A60FD datasheet

 ..1. Size:460K  aosemi
 aok031a60fd.pdf pdf_icon

AOK031A60FD

AOK031A60FD TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 304A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.1. Size:988K  aosemi
 aok033v120x2q.pdf pdf_icon

AOK031A60FD

ALPHA & OMEGA AOK033V120X2Q SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary Proprietary SiC MOSFET technology V @ T 1200 V DS J, max Low loss, with low R DS, ON I 120 A DM Fast switching with low R and low capacitance G R 33 m DS(ON), typ Optimized gate drive voltage (V = 15 V) GS Q 226 nC rr Low reverse recovery d... See More ⇒

 9.2. Size:984K  aosemi
 aok033v120x2.pdf pdf_icon

AOK031A60FD

ALPHA & OMEGA AOK033V120X2 SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary Proprietary SiC MOSFET technology V @ T 1200 V DS J,max Low loss, with low R DS(ON) I 120 A DM Fast switching with low R and low capacitance G R 33 m DS(ON),typ Optimized gate drive voltage (V = 15 V) GS Q 226 nC rr Low reverse recovery diod... See More ⇒

Detailed specifications: AOTF600A70FL, AOTF600A70L, AOTF66613L, AOTF66616L, AOTF66811L, AOTF66919L, AOTF66920L, AOTF780A70L, 2N7002, AOK040A60, AOK042A60FD, AOK065A60, AOK065A60FD, AOK095A60, AOK095A60FD, AOK095A60FDL, AOK125A60

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