All MOSFET. AOK065A60 Datasheet

 

AOK065A60 Datasheet and Replacement


   Type Designator: AOK065A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO247
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AOK065A60 Datasheet (PDF)

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AOK065A60

AOK065A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 168A Optimized switching parameters for better EMI RDS(ON),max

 0.1. Size:470K  aosemi
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AOK065A60

AOK065A60FDTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 200A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6679GI-HF | SPD04N60S5 | FCPF7N60YDTU | DM12N65C | SM6A12NSFP | H7N1002LM

Keywords - AOK065A60 MOSFET datasheet

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