All MOSFET. AOK065A60 Datasheet

 

AOK065A60 Datasheet and Replacement


   Type Designator: AOK065A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 446 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO247
 

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AOK065A60 Datasheet (PDF)

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AOK065A60

AOK065A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 168A Optimized switching parameters for better EMI RDS(ON),max

 0.1. Size:470K  aosemi
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AOK065A60

AOK065A60FDTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 200A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOTF66616L , AOTF66811L , AOTF66919L , AOTF66920L , AOTF780A70L , AOK031A60FD , AOK040A60 , AOK042A60FD , 5N60 , AOK065A60FD , AOK095A60 , AOK095A60FD , AOK095A60FDL , AOK125A60 , AOK125A60FDL , AOK160A60 , AOK160A60FDL .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - AOK065A60 MOSFET datasheet

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