AOI21357 Specs and Replacement
Type Designator: AOI21357
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO251A
AOI21357 substitution
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AOI21357 datasheet
aoi21357.pdf
AOD21357/AOI21357 30V P-Channel MOSFET General Description Product Summary VDS -30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
aod21357 aoi21357.pdf
AOD21357/AOI21357 30V P-Channel MOSFET General Description Product Summary VDS -30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
Detailed specifications: AOK125A60FDL, AOK160A60, AOK160A60FDL, AOK2500L, AOK66518, AOK66613, AOK66914, AOI1R4A70, AON6380, AOI360A70, AOI380A60C, AOI450A70, AOI600A60, AOI600A70, AOI600A70R, AOI950A70, AOY66620
Keywords - AOI21357 MOSFET specs
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