All MOSFET. AOI21357 Datasheet

 

AOI21357 Datasheet and Replacement


   Type Designator: AOI21357
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO251A
 

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AOI21357 Datasheet (PDF)

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AOI21357

AOD21357/AOI2135730V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -70A High Current Capability RDS(ON) (at VGS=-10V)

Datasheet: AOK125A60FDL , AOK160A60 , AOK160A60FDL , AOK2500L , AOK66518 , AOK66613 , AOK66914 , AOI1R4A70 , AON6380 , AOI360A70 , AOI380A60C , AOI450A70 , AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 .

History: IXZR08N120B | 24NM60G-T3F-T | CS8N60P | MTB09P04DJ3 | DH850N10

Keywords - AOI21357 MOSFET datasheet

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