All MOSFET. AOD1R4A70 Datasheet

 

AOD1R4A70 Datasheet and Replacement


   Type Designator: AOD1R4A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252
 

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AOD1R4A70 Datasheet (PDF)

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AOD1R4A70

AOD1R4A70/AOI1R4A70TM700V, a MOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOI600A60 , AOI600A70 , AOI600A70R , AOI950A70 , AOY66620 , AOY66919 , AOY66920 , AOY66923 , P0903BDG , AOD210V60E , AOD21357 , AOD280A60 , AOD32324 , AOD32326 , AOD32334C , AOD360A70 , AOD380A60 .

History: AP4963GEM-HF | GP2M010A065X | 2SJ259 | 30N20 | SVG032R4NL3 | IXTP12N65X2 | SSF3056C

Keywords - AOD1R4A70 MOSFET datasheet

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