All MOSFET. AOD1R4A70 Datasheet

 

AOD1R4A70 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOD1R4A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.4 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252

 AOD1R4A70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOD1R4A70 Datasheet (PDF)

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 aod1r4a70.pdf

AOD1R4A70 AOD1R4A70

AOD1R4A70/AOI1R4A70TM700V, a MOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 15A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SI7374DP

 

 
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