AOD600A60 Specs and Replacement
Type Designator: AOD600A60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO252
AOD600A60 substitution
- MOSFET ⓘ Cross-Reference Search
AOD600A60 datasheet
aod600a60 aoi600a60.pdf
AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aod600a60.pdf
AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aod600a70 aoi600a70.pdf
AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aod600a70r.pdf
AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOD280A60, AOD32324, AOD32326, AOD32334C, AOD360A70, AOD380A60, AOD380A60C, AOD450A70, STF13NM60N, AOD600A70, AOD600A70R, AOD66616, AOD66620, AOD66643, AOD66919, AOD66920, AOD66923
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
