Справочник MOSFET. AOD600A60

 

AOD600A60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOD600A60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11.5 nC
   trⓘ - Время нарастания: 5.5 ns
   Cossⓘ - Выходная емкость: 19 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AOD600A60

 

 

AOD600A60 Datasheet (PDF)

 ..1. Size:486K  aosemi
 aod600a60.pdf

AOD600A60 AOD600A60

AOD600A60/AOI600A60TM600V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

 7.1. Size:904K  aosemi
 aod600a70r.pdf

AOD600A60 AOD600A60

AOD600A70R/AOI600A70RTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 7.2. Size:660K  aosemi
 aod600a70.pdf

AOD600A60 AOD600A60

AOD600A70/AOI600A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:524K  aosemi
 aod609g.pdf

AOD600A60 AOD600A60

AOD609G Complementary Enhancement Mode Field Effect Transistor General DescriptionFeaturesThe AOD609G uses advanced trench technology n-channelMOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)

 9.2. Size:563K  aosemi
 aod607a.pdf

AOD600A60 AOD600A60

AOD607A30V Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 8A -12A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:269K  aosemi
 aod609.pdf

AOD600A60 AOD600A60

AOD609Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD609 uses advanced trench technology n-channelMOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V)charge. The complementary MOSFETs may be usedRDS(ON)

 9.4. Size:239K  aosemi
 aod606.pdf

AOD600A60 AOD600A60

AOD606Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD606 uses advanced trench n-channel p-channeltechnology MOSFETs to provide VDS (V) = 40V -40Vexcellent RDS(ON) and low gate charge. ID = 8A (VGS=10V) -8A (VGS = -10V)The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other

 9.5. Size:392K  aosemi
 aod603a.pdf

AOD600A60 AOD600A60

AOD603A60V Complementary MOSFETGeneral Description Product Summary N-Channel P-ChannelThe AOD603A uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gateVDS= 60V -60Vcharge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V)used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

 9.6. Size:209K  aosemi
 aod607.pdf

AOD600A60 AOD600A60

AOD607Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD607 uses advanced trench n-channel p-channeltechnology MOSFETs to provide VDS (V) = 30V -30Vexcellent RDS(ON) and low gate charge. ID = 12A (VGS=10V) -12A (VGS = -10V)The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other

 9.7. Size:940K  cn vbsemi
 aod603a.pdf

AOD600A60 AOD600A60

AOD603Awww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.030 at VGS = 10 V 35 TrenchFET Power MOSFETN-Channel 60 6 nC0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 19APPLICATIONSP-Channel - 60 8 nC0.060 at VGS = -

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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