AOD780A70 Datasheet and Replacement
Type Designator: AOD780A70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
Package: TO252
AOD780A70 substitution
AOD780A70 Datasheet (PDF)
aod780a70.pdf
AOD780A70/AOI780A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOD600A70 , AOD600A70R , AOD66616 , AOD66620 , AOD66643 , AOD66919 , AOD66920 , AOD66923 , IRF1405 , AOD950A70 , AOD609G , AOW125A60 , AOW190A60C , AOW360A70 , AOW66613 , AOW66616 , AOWF095A60 .
History: IRFR224PBF | DCC040M65G2 | AOW190A60C | CSFR3N60U | IXTH10N60A | NCE60H15A
Keywords - AOD780A70 MOSFET datasheet
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AOD780A70 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IRFR224PBF | DCC040M65G2 | AOW190A60C | CSFR3N60U | IXTH10N60A | NCE60H15A
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