AOW190A60C Specs and Replacement
Type Designator: AOW190A60C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO262
AOW190A60C substitution
- MOSFET ⓘ Cross-Reference Search
AOW190A60C datasheet
aow190a60c.pdf
AOWF190A60C/AOW190A60C TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aowf190a60c aow190a60c.pdf
AOWF190A60C/AOW190A60C TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOD66643, AOD66919, AOD66920, AOD66923, AOD780A70, AOD950A70, AOD609G, AOW125A60, IRF830, AOW360A70, AOW66613, AOW66616, AOWF095A60, AOWF125A60, AOWF160A60, AOWF190A60C, AOWF360A70
Keywords - AOW190A60C MOSFET specs
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