All MOSFET. AOW190A60C Datasheet

 

AOW190A60C Datasheet and Replacement


   Type Designator: AOW190A60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO262
 

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AOW190A60C Datasheet (PDF)

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AOW190A60C

AOWF190A60C/AOW190A60CTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOD66643 , AOD66919 , AOD66920 , AOD66923 , AOD780A70 , AOD950A70 , AOD609G , AOW125A60 , IRF1405 , AOW360A70 , AOW66613 , AOW66616 , AOWF095A60 , AOWF125A60 , AOWF160A60 , AOWF190A60C , AOWF360A70 .

History: 2P308A9 | MPSW60M086CFD | DMTH4007LPS | TK34A10N1 | LNH05R100 | AFN3404S23RG | P0950ETF

Keywords - AOW190A60C MOSFET datasheet

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