All MOSFET. AOWF600A70 Datasheet

 

AOWF600A70 Datasheet and Replacement


   Type Designator: AOWF600A70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO262F
 

 AOWF600A70 substitution

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AOWF600A70 Datasheet (PDF)

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AOWF600A70

AOWF600A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

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AOWF600A70

AOWF600A70FTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

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AOWF600A70

AOWF600A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOWF095A60 , AOWF125A60 , AOWF160A60 , AOWF190A60C , AOWF360A70 , AOWF380A60C , AOWF450A70 , AOWF600A60 , 5N50 , AOWF600A70F , AOWF780A70 , AOB095A60L , AOB125A60L , AOB160A60L , AOB190A60CL , AOB190A60L , AOB280A60L .

History: PB210HV | KI2300 | IXTH360N055T2 | APTC60DAM18CTG | ELM56801EA | EM6K7 | HUFA75829D3S

Keywords - AOWF600A70 MOSFET datasheet

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