All MOSFET. AOB190A60L Datasheet

 

AOB190A60L Datasheet and Replacement


   Type Designator: AOB190A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO263
 

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AOB190A60L Datasheet (PDF)

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AOB190A60L

AOB190A60L/AOT190A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

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AOB190A60L

AOTF190A60CL/AOT190A60CL/AOB190A60CLTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOWF600A60 , AOWF600A70 , AOWF600A70F , AOWF780A70 , AOB095A60L , AOB125A60L , AOB160A60L , AOB190A60CL , IRF840 , AOB280A60L , AOB360A70L , AOB380A60CL , AOB450A70L , AOB600A60L , AOB600A70FL , AOB600A70L , AOB66216L .

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